SUD50N02-06P Vishay Siliconix, SUD50N02-06P Datasheet - Page 2

• Manufacturer Part Number: SUD50N02-06P
• Description: P-Channel MOSFET
• Manufacturer: Vishay Siliconix

SPICE Device Model SUD50N02-06P
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
c
c
a
Parameter
b
c
c
c
c
c
b
J
= 25°C UNLESS OTHERWISE NOTED)
b
Symbol
V
r
I
t
t
DS(on)
C
C
V
C
Q
Q
D(on)
GS(th)
Q
d(on)
d(off)
t
t
t
oss
SD
iss
rss
rr
gd
r
gs
f
g
I
V
V
D
V
GS
DS
≅ 50 A, V
GS
I
= 10 V, I
= 10 V, V
F
= 0 V, V
V
V
Test Conditions
V
V
= 50 A, di/dt = 100 A/µs
V
DD
I
DS
DS
GS
S
GS
= 50 A, V
= 10 V, R
= V
= 5 V, V
= 4.5 V, I
= 10 V, I
GEN
D
DS
GS
GS
= 20 A, T
, I
= 25 V, f = 1 MHz
= 10 V, R
= 4.5 V, I
D
GS
GS
L
= 250 µA
D
D
= 0.20 Ω
= 20 A
= 10 V
= 20 A
= 0 V
J
G
= 125°C
D
= 2.5 Ω
= 50 A
Simulated
0.0041
0.0057
0.0065
Data
2418
0.91
964
816
348
1.4
7.5
20
11
10
31
6
9
9
Measured
0.0046
0.0073
Data
2550
900
415
1.2
7.5
19
11
10
24
35
6
9
Document Number: 70104
Unit
08-Jun-04
nC
pF
ns
Ω
V
A
V