BUL45_06 ON Semiconductor, BUL45_06 Datasheet
BUL45_06
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BUL45_06 Summary of contents
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... Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 7 ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (I = 100 mA mH) C Collector Cutoff Current (V = Rated V CE CEO Collector Cutoff Current (V = Rated V CE CES Emitter Cutoff Current (V = ...
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TYPICAL STATIC CHARACTERISTICS 100 T = 25° 125° −20° 0.01 0.10 1. COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 2.0 1 1.5 ...
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TYPICAL SWITCHING CHARACTERISTICS 1200 B(off 25° 300 125°C J 1000 800 600 400 200 0 0 ...
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TYPICAL SWITCHING CHARACTERISTICS 150 T = 25°C J 140 T = 125°C J 130 120 110 100 ...
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dyn dyn −1 90 − − − − TIME Figure 18. Dynamic Saturation Voltage Measurements ...
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... The BUL45 Bipolar Power Transistors were specially designed for use in electronic lamp ballasts. A circuit designed by ON Semiconductor applications was built 385 V C1 D10 FUSE CTN 0 LINE 220 BUL45 Transistor D1 = 1N4007 Rectifier D2 = 1N5761 Rectifier MUR150 MUR105 ...
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... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...