SUB75N03-07 Vishay Siliconix, SUB75N03-07 Datasheet - Page 4

• Manufacturer Part Number: SUB75N03-07
• Description: N-Channel MOSFET
• Manufacturer: Vishay Siliconix

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SUP/SUB75N03-07
Vishay Siliconix
0.01
0.1
2
1
2.5
2.0
1.5
1.0
0.5
80
60
40
20
10
0
0
–50
0
0.2
0.1
0.05
0.02
–5
Duty Cycle = 0.5
On-Resistance vs. Junction Temperature
V
I
–25
D
GS
= 30 A
25
= 10 V
Maximum Drain Current vs.
T
0
T
J
A
Single Pulse
Ambiemt Temperature
50
– Junction Temperature ( C)
– Ambient Temperature ( C)
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25
10
75
50
–4
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
10
150
–3
150
Square Wave Pulse Duration (sec)
175
175
10
–2
100
0.1
10
500
100
1
10
1
0.1
Source-Drain Diode Forward Voltage
by r
T
Limited
J
DS(on)
= 150 C
0.3
V
10
V
SD
DS
–1
– Source-to-Drain Voltage (V)
Single Pulse
Safe Operating Area
T
– Drain-to-Source Voltage (V)
C
1
= 25 C
0.6
0.9
T
S-000652—Rev. D, 27-Mar-00
J
= 25 C
Document Number: 70794
10
1
1.2
www.
1 ms
10 ms
100 ms
dc
10 s
100 s
3
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