STD3NC50 ST Microelectronics, Inc., STD3NC50 Datasheet

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STD3NC50

Manufacturer Part Number
STD3NC50
Description
N-channel 500V - 2.2 Ohm - 3.2A - Dpak/ipak Powermesh MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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Quantity
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Part Number:
STD3NC50-1
Manufacturer:
ST
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STD3NC50-TR
Manufacturer:
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Part Number:
STD3NC50T4
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DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1)I
May 2002
STD3NC50
STD3NC50-1
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
SD
Symbol
dv/dt(1)
I
V
DM
P
V
V
T
DGR
I
I
TOT
T
stg
3.2A, di/dt 100A/µs, V
DS
GS
D
D
TYPE
j
(
l
)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 2.2
500 V
500 V
V
II is the evolution of the first
DSS
DD
V
(BR)DSS
N-CHANNEL 500V - 2.2 - 3.2A DPAK / IPAK
R
< 2.7
< 2.7
DS(on)
C
™.
GS
Parameter
= 25°C
, T
GS
= 20 k )
j
The layout re-
= 0)
T
JMAX.
C
C
= 25°C
= 100°C
3.2 A
3.2 A
I
D
INTERNAL SCHEMATIC DIAGRAM
PowerMesh™II MOSFET
DPAK
1
3
–65 to 150
STD3NC50-1
Value
12.8
0.48
500
500
±30
150
3.2
3.5
60
2
STD3NC50
IPAK
1
W/°C
V/ns
Unit
2
°C
°C
W
V
V
V
A
A
A
3
1/9

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STD3NC50 Summary of contents

Page 1

... I DS(on) D < 2.7 3.2 A < 2.7 3.2 A ™. The layout re- INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25° JMAX. STD3NC50 STD3NC50-1 PowerMesh™II MOSFET 3 1 DPAK IPAK Value 500 500 ±30 3.2 2 12.8 60 0.48 3.5 –65 to 150 150 Unit ...

Page 2

... STD3NC50 / STD3NC50-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting ° ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ...

Page 3

... 10V G GS (see test circuit, Figure 5) Test Conditions 3.5 A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedance STD3NC50 / STD3NC50-1 Min. Typ. Max. Unit 12 2.7 nC 6.1 nC Min. Typ. Max. Unit ...

Page 4

... STD3NC50 / STD3NC50-1 Output Characteristics Tranconductance Gate Charge vs Gate-source Voltage 4/9 Tranfer Characteristics Static Drain-Source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics STD3NC50 / STD3NC50-1 Normalized On Resistance vs Temperature 5/9 ...

Page 6

... STD3NC50 / STD3NC50-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 STD3NC50 / STD3NC50-1 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 0068771-E 7/9 ...

Page 8

... STD3NC50 / STD3NC50-1 DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 8/9 TO-252 (DPAK) MECHANICAL DATA mm TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.8 1. inch MIN. TYP. MAX. 0.087 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.213 0.018 0.024 0.019 0.024 0.236 0.244 0.252 0.260 ...

Page 9

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