SI1022R Vishay Siliconix, SI1022R Datasheet

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SI1022R

Manufacturer Part Number
SI1022R
Description
N-Channel 60-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
c.
Document Number: 71331
S-03049—Rev. A, 05-Feb-01
D Low On-Resistance: 1.25 W
D Low Threshold: 2.5 V
D Low Input Capacitance: 30 pF
D Fast Switching Speed: 25 ns
D Low Input and Output Leakage
D Miniature Package
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
V
(BR)DSS(min)
Surface Mounted on FR4 Board, Power Applied for tv10 sec.
60
a
(V)
a
a
1.25 @ V
r
DS(on)
GS
(W)
= 10 V
Parameter
N-Channel 60-V (D-S) MOSFET
D Low Offset Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Error Voltage
D Small Board Area
G
S
V
GS(th)
a
1 to 2.5
1
2
(SOT-416)
(V)
SC-75A
New Product
_
I
D
T
T
T
T
A
A
A
A
330
(mA)
3
= 85_C
= 25_C
= 25_C
= 85_C
D
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems
D Solid-State Relays
Displays, Memories, Transistors, etc.
Marking Code: E
Symbol
T
R
J
V
V
I
P
, T
DM
thJA
I
DS
GS
D
D
stg
–55 to 150
Limit
Vishay Siliconix
"20
330
240
650
250
130
500
60
Si1022R
www.vishay.com
Unit
_C/W
mW
mA
_C
V
1

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SI1022R Summary of contents

Page 1

... D Solid-State Relays D Low Error Voltage D Small Board Area SC-75A (SOT-416 25_C 85_C 25_C 85_C A a Si1022R Vishay Siliconix Marking Code: E Symbol Limit " 330 I D 240 I 650 DM 250 P D 130 R 500 thJA ...

Page 2

... Si1022R Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge b, c Switching Turn-On Time ...

Page 3

... Total Gate Charge (nC) g Document Number: 71331 S-03049—Rev. A, 05-Feb-01 New Product _ 1200 800 1000 0.5 0.6 Si1022R Vishay Siliconix Transfer Characteristics T = –55_C J 900 600 300 – Gate-to-Source Voltage (V) GS Capacitance 50 ...

Page 4

... Si1022R Vishay Siliconix Source-Drain Diode Forward Voltage 1000 100 T = 125_C 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Threshold Voltage Variance Over Temperature 0.4 0.2 = 250 –0.0 –0.2 –0.4 –0.6 –0.8 –50 – – Junction Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient ...

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