SI1302DL Vishay Siliconix, SI1302DL Datasheet - Page 2

• Manufacturer Part Number: SI1302DL
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si1302DL
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
1.0
0.8
0.6
0.4
0.2
0.0
0.0
b
Parameter
0.5
V
a
a
DS
Output Characteristics
a
– Drain-to-Source Voltage (V)
V
1.0
GS
= 10 thru 4 V
a
1.5
_
2.0
Symbol
V
r
I
DS(on)
t
t
I
I
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
SD
t
t
gd
rr
fs
gs
r
f
3 V
g
2.5
_
3.0
New Product
V
I
V
D
DS
DS
^ 0.5 A, V
I
F
= 15 V, V
= 24 V, V
V
V
V
= 0.23 A, di/dt = 100 A/ms
V
V
V
I
V
V
V
S
DS
Test Condition
GS
GS
DS
DS
DS
DD
DD
DS
= 0.23 A, V
= V
= 24 V, V
= 5 V, V
= 10 V, I
= 4.5 V, I
= 0 V, V
= 15 V, I
= 15 V, R
= 15 V, R
GEN
GS
GS
GS
, I
= 10 V, I
= 0 V, T
= 10 V, R
D
GS
GS
D
D
D
= 250 mA
GS
GS
L
L
= 0.6 A
= 0.6 A
= 0.2 A
= 30 W
= 30 W
= 10 V
= "20 V
= 0 V
= 0 V
J
D
1.0
0.8
0.6
0.4
0.2
0.0
= 70_C
G
= 0.6 A
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
Min
1.5
– Gate-to-Source Voltage (V)
1
1.5
T
25_C
C
2.0
0.410
0.600
Typ
0.75
0.86
0.24
0.08
= 125_C
0.8
15
5
8
8
7
S-02367—Rev. C, 23-Oct-00
Document Number: 71249
2.5
"100
Max
0.480
0.700
3.0
1.2
1.4
10
15
15
15
30
1
5
–55_C
3.5
Unit
nA
m
mA
nC
ns
W
W
V
A
S
V
4.0