SI1405DL Vishay Siliconix, SI1405DL Datasheet - Page 3

• Manufacturer Part Number: SI1405DL
• Description: P-Channel 1.8-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

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Document Number: 71073
S-01560—Rev. B, 17-Jul-00
0.5
0.4
0.3
0.2
0.1
0.1
0
5
4
3
2
1
0
5
1
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 1.8 A
0.2
On-Resistance vs. Drain Current
= 4 V
1
1
V
SD
Q
g
V
– Source-to-Drain Voltage (V)
I
0.4
GS
D
– Total Gate Charge (nC)
2
T
– Drain Current (A)
Gate Charge
= 1.8 V
J
2
= 150 C
0.6
3
3
0.8
4
V
V
GS
GS
T
= 2.5 V
= 4.5 V
J
4
= 25 C
1.0
5
1.2
5
6
New Product
1000
800
600
400
200
0.5
0.4
0.3
0.2
0.1
1.4
1.2
1.0
0.8
0.6
0
0
–50
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
On-Resistance vs. Junction Temperature
= 0.8 A
V
I
C
D
–25
GS
rss
= 1.8 A
C
= 4.5 V
1
iss
T
V
V
2
0
J
GS
DS
– Junction Temperature ( C)
– Gate-to-Source Voltage (V)
– Drain-to-Source Voltage (V)
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C
25
oss
Capacitance
I
D
2
= 1.8 A
Vishay Siliconix
50
4
3
75
Si1405DL
100
6
4
125
150
5
8
2-3