SI1410EDH Vishay Siliconix, SI1410EDH Datasheet

no-image

SI1410EDH

Manufacturer Part Number
SI1410EDH
Description
N-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1410EDH-T1
Manufacturer:
SILICONIX
Quantity:
82 000
Part Number:
SI1410EDH-T1
Manufacturer:
Vishay
Quantity:
8 132
Part Number:
SI1410EDH-T1-E3
Manufacturer:
VISHAY
Quantity:
248 968
www.DataSheet4U.com
Notes
a.
Document Number: 71409
S-03185—Rev. A, 05-Mar-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
20
(V)
G
D
D
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
0.080 @ V
0.100 @ V
J
a
0.070 @ V
= 150_C)
a
r
Parameter
Parameter
DS(on)
_
6
5
4
GS
GS
GS
a
a
= 2.5 V
= 1.8 V
(W)
= 4.5 V
N-Channel 20-V (D-S) MOSFET
D
D
S
a
Marking Code
AA
Steady State
Steady State
T
T
T
T
t v 5 sec
I
New Product
A
A
A
A
D
XX
3.7
3.4
3.0
Part # Code
= 25_C
= 85_C
= 25_C
= 85_C
(A)
_
Lot Traceability
and Date Code
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
DM
thJA
thJF
I
I
GS
DS
D
S
D
stg
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package
D Load Switching
D PA Switch
D Level Switch
G
Typical
5 secs
1.56
0.81
100
3.7
2.6
1.4
60
34
–55 to 150
"12
1 kW
20
8
Steady State
Maximum
Vishay Siliconix
0.52
125
2.9
2.0
0.9
1.0
80
45
Si1410EDH
D
S
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
V
A
1

Related parts for SI1410EDH

SI1410EDH Summary of contents

Page 1

... T = 85_C 25_C 85_C A T Symbol sec R Steady State Steady State R Si1410EDH Vishay Siliconix D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package D Load Switching D PA Switch D Level Switch secs Steady State "12 ...

Page 2

... Si1410EDH www.DataSheet4U.com Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 71409 S-03185—Rev. A, 05-Mar-01 New Product 4.5 6.0 7.5 4.5 6.0 7.5 Si1410EDH Vishay Siliconix Transfer Characteristics 8 25_C –55_C 0.00 0.25 0.50 0.75 1.00 1.25 1.50 V – Gate-to-Source Voltage (V) GS Capacitance 1000 800 600 C iss 400 ...

Page 4

... Si1410EDH www.DataSheet4U.com Vishay Siliconix Source-Drain Diode Forward Voltage 150_C J 1 0.1 0 0.3 0.6 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 = 250 0.1 –0.0 –0.1 –0.2 –0.3 –0.4 –50 – – Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 –4 – www.vishay.com 4 New Product ...

Page 5

... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 10 Document Number: 71409 S-03185—Rev. A, 05-Mar-01 New Product _ Normalized Thermal Transient Impedance, Junction-to-Foot –3 – Square Wave Pulse Duration (sec) Si1410EDH Vishay Siliconix – www.vishay.com 5 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies ...

Related keywords