SI1441EDH Vishay Siliconix, SI1441EDH Datasheet - Page 4

• Manufacturer Part Number: SI1441EDH
• Description: P-Channel 20 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si1441EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.10
0.08
0.06
0.04
0.02
1.5
1.3
1.1
0.9
0.7
30
24
18
12
0.001
6
0
- 50
1
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
0.01
T
GS
0
2
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
Threshold Voltage
25
Time (s)
V
0.1
50
3
GS
= - 4.5 V; I
75
I
D
= - 5 A
100
V
I
D
D
4
1
GS
= - 4.4 A
T
= - 5 A
T
J
= - 2.5 V;
J
= 125 °C
= 25 °C
125
New Product
150
10
5
0.90
0.75
0.60
0.45
0.30
100
0.01
100
0.1
10
0.1
10
1
- 50
1
0.1
0
Single Pulse
Limited by R
T
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse Power, Junction-to-Ambient
A
- 25
= 25 °C
GS
Source-Drain Diode Forward Voltage
> minimum V
V
DS
V
0
SD
DS(on)
- Drain-to-Source Voltage (V)
T
- Source-to-Drain Voltage (V)
1
J
25
- Temperature (°C)
*
0.5
GS
BVDSS Limited
at which R
I
D
50
T
= - 250 μA
J
S10-1827-Rev. A, 09-Aug-10
= 150 °C
Document Number: 66823
75
T
10
DS(on)
J
= 25 °C
100
is specified
100 μs
DC
1 ms
10 ms
100 ms
1 s, 10 s
1.0
125
100
150
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