SI1555DL Vishay Siliconix, SI1555DL Datasheet

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SI1555DL

Manufacturer Part Number
SI1555DL
Description
Complementary Low-Threshold MOSFET Pair
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 71079
S-21374—Rev. C, 12-Aug-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
N-Channel
P-Channel
Complementary Low-Threshold MOSFET Pair
Parameter
V
DS
J
a
20
-8
= 150_C)
a
(V)
Parameter
_
a
G
S
D
1
1
2
a
1
2
3
SC-70 (6-LEADS)
T
T
T
T
0.600 @ V
0.850 @ V
1.200 @ V
0.385 @ V
0.630 @ V
A
A
A
A
SOT-363
= 25_C
= 85_C
= 25_C
= 85_C
Top View
r
DS(on)
A
GS
GS
GS
GS
GS
= 25_C UNLESS OTHERWISE NOTED)
(W)
= -4.5 V
= -2.5 V
= -1.8 V
= 4.5 V
= 2.5 V
Symbol
Steady State
Steady State
T
t v 5 sec
6
5
4
J
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
D
G
S
2
1
2
5 secs
"0.70
"0.50
0.25
0.30
0.16
Symbol
N-Channel
R
R
I
"0.70
"0.54
"0.60
"0.50
"0.42
thJA
thJF
D
(A)
"12
20
Steady State
Marking Code
RB XX
"0.66
"0.48
0.23
0.27
0.14
Typical
Part # Code
-55 to 150
360
400
300
"1.0
Lot Traceability
and Date Code
5 secs
"0.60
"0.43
-0.25
0.30
0.16
Maximum
P-Channel
Vishay Siliconix
415
460
350
"8
-8
Steady State
"0.57
"0.41
Si1555DL
-0.23
0.27
0.14
www.vishay.com
Unit
_C/W
C/W
Unit
_C
W
V
A
1

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SI1555DL Summary of contents

Page 1

... 85_C 0. stg Symbol sec R thJA Steady State Steady State R thJF Si1555DL Vishay Siliconix Marking Code RB XX Lot Traceability and Date Code Part # Code P-Channel Steady State 5 secs Steady State 20 -8 "8 "0.66 "0.60 "0.57 "0.48 "0.43 " ...

Page 2

... Si1555DL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 0. 0.0 0.2 0 Total Gate Charge (nC) g Document Number: 71079 S-21374—Rev. C, 12-Aug- 1 2.0 2 0.8 1.0 0.6 0.8 Si1555DL Vishay Siliconix N−CHANNEL Transfer Characteristics 1.0 0.8 0.6 0 125_C C 0.2 25_C -55 _C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Capacitance 100 80 C iss oss 20 C rss ...

Page 4

... Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0.1 = 250 -0.0 -0.1 -0.2 -0.3 -0.4 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...

Page 5

... 1.0 0.5 0.0 0.0 0.2 0.4 0 Drain Current (A) D Document Number: 71079 S-21374—Rev. C, 12-Aug- Square Wave Pulse Duration (sec) 1 2.0 2 0.8 1.0 Si1555DL Vishay Siliconix N−CHANNEL - 1 1 P−CHANNEL Transfer Characteristics 1 -55_C C 0.8 25_C 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Capacitance 160 C iss 120 80 C oss ...

Page 6

... Si1555DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 0. 0.0 0.2 0.4 0.6 0.8 1 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.3 = 250 0.2 0.1 0.0 -0.1 -0.2 -50 - Temperature (_C) J www ...

Page 7

... Document Number: 71079 S-21374—Rev. C, 12-Aug- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot - 2 10 Square Wave Pulse Duration (sec) Si1555DL Vishay Siliconix P−CHANNEL Notes Duty Cycle Per Unit Base = R ...

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