SI1902DL Vishay Siliconix, SI1902DL Datasheet - Page 2

• Manufacturer Part Number: SI1902DL
• Description: Dual N-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si1902DL
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
1.0
0.8
0.6
0.4
0.2
0.0
0.0
b
Parameter
0.5
V
a
a
DS
Output Characteristics
V
a
- Drain-to-Source Voltage (V)
GS
1.0
= 5 thru 2.5 V
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
1.5
2.0
Symbol
V
1.5 V
r
I
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
2 V
1 V
GSS
DSS
Q
g
t
t
SD
t
rr
fs
gs
gd
r
f
g
2.5
3.0
V
I
D
V
DS
DS
^ 0.5 A, V
= 10 V, V
I
F
V
V
= 16 V, V
V
V
V
V
= 0.23 A, di/dt = 100 A/ms
V
V
V
I
GS
DS
DS
GS
DS
S
DS
Test Condition
DS
DD
DD
= 0.23 A, V
= 0 V, V
= 4.5 V, I
w 5 V, V
= 2.5 V, I
= 10 V, I
= V
= 16 V, V
= 10 V, R
= 10 V, R
GEN
GS
GS
GS
, I
= 4.5 V, I
GS
= 0 V, T
= 4.5 V, R
D
D
GS
D
D
GS
GS
= 250 mA
L
L
= 0.66 A
= "12 V
= 0.40 A
= 0.66 A
= 20 W
= 20 W
= 4.5 V
= 0 V
= 0 V
1.0
0.8
0.6
0.4
0.2
0.0
D
J
= 85_C
= 0.66 A
G
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
0.6
1.0
25_C
1.0
T
C
= 125_C
0.320
0.560
Typ
0.06
0.30
1.5
0.8
0.8
10
16
10
10
20
S-21374—Rev. E, 12-Aug-02
1.5
Document Number: 71080
-55 _C
"100
Max
0.385
0.630
1.5
1.2
1.2
20
30
20
20
40
1
5
2.0
Unit
nA
m
mA
nC
ns
W
W
V
A
S
V
2.5