SI1912EDH Vishay Siliconix, SI1912EDH Datasheet
SI1912EDH
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SI1912EDH Summary of contents
Page 1
... 85_C Symbol sec R thJA Steady State Steady State R thJF Si1912EDH Vishay Siliconix D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package D Load Switching D PA Switch D Level Switch secs Steady State 20 "12 1.13 1 ...
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... Si1912EDH Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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... Q – Total Gate Charge (nC) g Document Number: 71408 S-03176—Rev. A, 05-Mar-01 New Product 1.5 2.0 1.2 1.5 Si1912EDH Vishay Siliconix Transfer Characteristics 2 –55_C C 25_C 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 V – Gate-to-Source Voltage (V) GS Capacitance 140 120 100 C iss oss ...
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... Si1912EDH Vishay Siliconix Source-Drain Diode Forward Voltage 150_C J 1 0.1 0 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 = 100 0.1 –0.0 –0.1 –0.2 –0.3 –0.4 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 ...
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... Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Document Number: 71408 S-03176—Rev. A, 05-Mar-01 New Product _ Normalized Thermal Transient Impedance, Junction-to-Foot –2 10 Square Wave Pulse Duration (sec) Si1912EDH Vishay Siliconix – www.vishay.com 5 ...