SI1972DH Vishay Siliconix, SI1972DH Datasheet - Page 4

• Manufacturer Part Number: SI1972DH
• Description: Dual N-Channel 30 V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si1972DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
0.1
10
1
- 50
0
- 25
0.2
V
SD
0
Forward Diode Voltage
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
75
0.8
0.01
0.1
10
I
1
D
0.1
100
T
= 250 µA
J
* V
Safe Operating Area, Junction-to-Ambient
= 25 °C
Limited by R
1.0
Single Pulse
T
GS
125
A
= 25 °C
V
minimum V
DS
150
1.2
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
10
DS(on)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
5
4
3
2
1
0
is specified
0
I
D
100 µs
10 ms
100 ms
1 s, 10 s
DC
1 ms
On-Resistance vs. Gate-Source Voltage
= 1.3 A
0.1
100
2
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
4
1
Time (s)
S10-0721-Rev. B, 29-Mar-10
Document Number: 74398
6
10
125 °C
25 °C
8
100
600
10
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