IDT70T3539M Integrated Device Technology, IDT70T3539M Datasheet - Page 7

• Manufacturer Part Number: IDT70T3539M
• Description: High-speed 2.5v 512k X 36 Synchronous Dual-port Static Ram With 3.3v Or 2.5v Interface
• Manufacturer: Integrated Device Technology

(V
(V
(INPUTS and I/O’s)
I
I
V
V
V
T
T
T
OUT
OUT
BIAS
STG
JN
TERM
TERM
TERM
Symbol
DD
DDQ
V
V
V
V
C
(For V
(For V
Symbol
OH
OH
)
OL
OL
C
OUT
(3)
)
(2)
(2)
IN
|I
|I
|I
Symbol
LO
(3.3V)
(3.3V)
(2.5V)
(2.5V)
LI
LI
(3)
|
|
|
DDQ
DDQ
Input Capacitance
Output Capacitance
= 3.3V) DC Output Current
= 2.5V) DC Output Current
Input Leakage Current
JTAG & ZZ Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
Parameter
V
with Respect to GND
V
with Respect to GND
Input and I/O Terminal
Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Junction Temperature
DD
DDQ
Terminal Voltage
Terminal Voltage
Parameter
Rating
(1)
(1)
TRST
(1)
(1)
(1)
(1,3)
Conditions
V
V
OUT
IN
= 3dV
= 3dV
(1,2)
-0.3 to V
-0.3 to V
-0.5 to 3.6
(2)
Commercial
& Industrial
-55 to +125
-65 to +150
I
I
I
I
V
V
CE
OL
OH
OL
OH
DDQ
DD =
+150
0
= +4mA, V
= +2mA, V
= -4mA, V
= -2mA, V
50
40
DDQ
DDQ
Max.
10.5
= V
15
= Max., V
Max.
+ 0.3
+ 0.3
IH
5678 tbl 07
or CE
,
Unit
V
pF
pF
IN
DDQ
DDQ
DDQ
DDQ
IN
= 0V to V
6.42
1
= 0V to V
= V
= Min.
= Min.
= Min.
= Min.
7
5678 tbl 06
Unit
mA
mA
o
o
o
V
V
V
C
C
C
IL
Test Conditions
, V
DD
OUT
DDQ
= 0V to V
DDQ
Min.
2.4
2.0
___
___
___
___
___
70T3539MS
Max.
±30
0.4
0.4
10
10
___
___
5678 tbl 08
Unit
µ A
µ A
µ A
V
V
V
V