IDT70914S Integrated Device Technology, IDT70914S Datasheet - Page 9

• Manufacturer Part Number: IDT70914S
• Description: High Speed 36k 4k X 9 Synchronous Dual-port Ram
• Manufacturer: Integrated Device Technology

NOTES:
1. For t
2. OE LOW throughout.
3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
4. For t
IDT70914S
High-Speed 36K (4K x 9) Synchronous Dual-Port Static RAM
be repeated on the second write clock rising edge. If CE = V
be repeated.
ADDRESS
ADDRESS
DATA
DATA
CYC
CYC
CLKEN
DATA
DATA
CLKEN
> min.; OE may be used to avoid data out coincident with the rising edge of the subsequent write clock. Use of OE will eliminate the need for the write to
= min.; data out coincident with the rising edge of the subsequent write clock can occur. To ensure writing to the correct address location, the write must
CLK
R/W
CLK
R/W
OUT
OUT
CE
OE
CE
IN
IN
An
An
t
CKLZ
t
t
CH
CKLZ
(3)
(3)
t
t
CD
CD
t
t
CH
CYC
t
t
CL
OHZ
An + 1
(1)
IL
, invalid data will be written into array. The An+1 must be rewritten on the following cycle.
t
CYC
Qn
Qn
(4)
t
CH
6.42
9
t
CKHZ
t
CL
t
CYC
(3)
Military, Industrial and Commercial Temperature Ranges
t
CL
An + 1
Dn + 1
An + 1
Dn + 1
t
t
S
S
(1)
(1)
t
H
t
H
An + 2
Dn + 2
3490 drw 10
3490 drw 11