SUM110N04-04 Vishay Siliconix, SUM110N04-04 Datasheet
SUM110N04-04
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SUM110N04-04 Summary of contents
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... 0 25_C 25_C Symbol R thJA R thJC SUM110N04-04 Vishay Siliconix FEATURES D TrenchFETr Power MOSFETS: 1.8-V Rated D 175_C Junction Temperature APPLICATIONS D Automotive - ABS - 12-V EPS - Motor Drivers Limit 110 a 107 350 60 180 c 250 3.75 -55 to 175 stg ...
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... SUM110N04-04 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Document Number: 72077 S-22450—Rev. B, 20-Jan-03 New Product 0.005 = -55_C C 0.004 25_C 0.003 125_C 0.002 0.001 0.000 SUM110N04-04 Vishay Siliconix Transfer Characteristics 250 200 150 100 T = 125_C C 50 25_C Gate-to-Source Voltage (V) GS On-Resistance vs ...
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... SUM110N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 -50 - Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product 100 10 1 100 ...
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... Document Number: 72077 S-22450—Rev. B, 20-Jan-03 New Product 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUM110N04-04 Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 0 Drain-to-Source Voltage ( ...