SI3424DV Vishay Siliconix, SI3424DV Datasheet
SI3424DV
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SI3424DV Summary of contents
Page 1
... 70_C 25_C 70_C Symbol sec R thJA Steady State Steady State R thJF Si3424DV Vishay Siliconix ( (4) S N-Channel MOSFET 5 secs Steady State 30 "20 6.7 5.0 5.4 4.0 30 1.7 1.0 2.0 1.14 D 1.3 0.73 –55 to 150 stg Typical Maximum 40 62.5 90 110 25 30 ...
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... Si3424DV Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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... V – Source-to-Drain Voltage (V) SD Document Number: 71317 S-02157—Rev. A, 02-Oct-00 New Product 25_C J 1.0 1.2 1.4 Si3424DV Vishay Siliconix Capacitance 800 600 C iss 400 C oss 200 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si3424DV Vishay Siliconix Threshold Voltage 0.4 0.2 = 250 –0.0 –0.2 –0.4 –0.6 –0.8 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...