SI3424DV Vishay Siliconix, SI3424DV Datasheet
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Manufacturer Part Number
SI3424DV
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Available stocks
Part Number:
SI3424DV -T1-E3
Part Number:
SI3424DV -T1-E3
Part Number:
SI3424DV -T1-E3
Part Number:
SI3424DV -T1-E3
Part Number:
SI3424DV -T1-GE3
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Notes
a.
Document Number: 71317
S-02157—Rev. A, 02-Oct-00
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
DS
30
(V)
3 mm
J
a
0.038 @ V
0.028 @ V
= 150_C)
a
Parameter
Parameter
r
DS(on)
1
2
3
Top View
_
TSOP-6
2.85 mm
a
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
6
5
4
a
Steady State
Steady State
T
T
T
T
t v 5 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
6.7
5.7
(A)
_
Symbol
Symbol
T
(3) G
R
R
V
J
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
N-Channel MOSFET
(1, 2, 5, 6) D
(4) S
Typical
5 secs
6.7
5.4
1.7
2.0
1.3
40
90
25
–55 to 150
"20
30
30
Steady State
Maximum
Vishay Siliconix
1.14
0.73
62.5
110
5.0
4.0
1.0
30
Si3424DV
www.vishay.com
Unit
_C/W
Unit
C/W
_C
W
V
A
1
Related parts for SI3424DV
SI3424DV Summary of contents
... 70_C 25_C 70_C Symbol sec R thJA Steady State Steady State R thJF Si3424DV Vishay Siliconix ( (4) S N-Channel MOSFET 5 secs Steady State 30 "20 6.7 5.0 5.4 4.0 30 1.7 1.0 2.0 1.14 D 1.3 0.73 –55 to 150 stg Typical Maximum 40 62.5 90 110 25 30 ...
... Si3424DV Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
... V – Source-to-Drain Voltage (V) SD Document Number: 71317 S-02157—Rev. A, 02-Oct-00 New Product 25_C J 1.0 1.2 1.4 Si3424DV Vishay Siliconix Capacitance 800 600 C iss 400 C oss 200 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
... Si3424DV Vishay Siliconix Threshold Voltage 0.4 0.2 = 250 –0.0 –0.2 –0.4 –0.6 –0.8 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...
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