SI3442BDV Vishay Siliconix, SI3442BDV Datasheet
SI3442BDV
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SI3442BDV Summary of contents
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... PRODUCT SUMMARY V (V) r (W) DS DS(on) 0.057 @ 0.090 @ Ordering Information: Si3442BDV-T1—E3 Marking Code: ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
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... Si3442BDV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance ...
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... J 1 0.1 0.01 0.001 1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Document Number: 72504 S-40424—Rev. C, 15-Mar- 2.5 3.0 3 25_C J 0.8 1.0 1.2 Si3442BDV Vishay Siliconix Capacitance 480 400 C iss 320 240 160 C oss 80 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4.5 V ...
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... Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 0.2 0 250 mA D −0.0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com ...