SI3445ADV Vishay Siliconix, SI3445ADV Datasheet

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SI3445ADV

Manufacturer Part Number
SI3445ADV
Description
P-Channel 1.8-V (G-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72859
S-40582—Rev. A, 29-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on FR4 Board, t v 5 sec.
i
DS
−8
(V)
J
ti
t A bi
J
J
a
a
0.042 @ V
0.060 @ V
0.080 @ V
= 150_C)
= 150_C)
t
a
a
Ordering Information: Si3445ADV-T1—E3
Marking Code: C5XXX
r
Parameter
Parameter
DS(on)
3 mm
GS
GS
GS
a
a
P-Channel 1.8-V (G-S) MOSFET
(W)
= −4.5 V
= −2.5 V
= −1.8 V
a
1
2
3
Top View
TSOP-6
2.85 mm
A
6
5
4
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 5 sec
I
New Product
A
A
A
A
D
−5.8
−4.9
−4.2
= 25_C
= 70_C
= 25_C
= 70_C
(A)
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
(3) G
I
I
I
GS
DS
D
D
S
D
D
stg
P-Channel MOSFET
(1, 2, 5, 6) D
(4) S
Typical
5 secs
−5.8
−4.7
−1.7
2.0
1.3
50
90
22
−55 to 150
−20
"8
−8
Steady State
Maximum
Vishay Siliconix
−4.4
−3.5
−0.9
62.5
1.1
0.7
110
30
Si3445ADV
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI3445ADV Summary of contents

Page 1

... DS DS(on) 0.042 @ V = −4 0.060 @ V = −2.5 V −8 GS 0.080 @ V = −1 Ordering Information: Si3445ADV-T1—E3 Marking Code: C5XXX ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current continuous Source Current (Diode Conduction) ...

Page 2

... Si3445ADV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72859 S-40582—Rev. A, 29-Mar-04 New Product 2000 1600 1200 0.20 0.16 0.12 0. 25_C J 0.04 0.00 1.0 1.2 1.4 Si3445ADV Vishay Siliconix Capacitance C iss C oss 800 C rss 400 − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...

Page 4

... Si3445ADV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 0 250 mA D 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72859 S-40582—Rev. A, 29-Mar-04 New Product −2 − Square Wave Pulse Duration (sec) Si3445ADV Vishay Siliconix 1 10 www.vishay.com 5 ...

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