SI3455DV Fairchild Semiconductor, SI3455DV Datasheet
SI3455DV
Manufacturer Part Number
SI3455DV
Description
Single P-Channel Logic Level PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI3455DV.pdf
(5 pages)
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SI3455DV
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20 000
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SI3455DV-T1
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SI3455DV-T1-E3
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Part Number:
SI3455DV-T1-GE3
Manufacturer:
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Quantity:
20 000
Si3455DV
Single P-Channel Logic Level PowerTrench
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
.455
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
Si3455DV
Device
D
Parameter
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• –3.6 A, –30 V.
• Low gate charge
• High performance trench technology for extremely
low R
MOSFET
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–3.6
–30
±20
–10
1.6
0.8
78
30
= 75 mΩ @ V
= 125 mΩ @ V
6
5
4
April 2001
GS
Si3455DV Rev A1 (W)
GS
3000 units
Quantity
= –10 V
= –4.5 V
Units
°C/W
°C/W
°C
W
V
V
A
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SI3455DV Summary of contents
Page 1
... Reel Size 7’’ April 2001 mΩ –10 V DS(ON 125 mΩ –4.5 V DS(ON Ratings Units –30 V ±20 V –3.6 A –10 1.6 W 0.8 °C –55 to +150 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units Si3455DV Rev A1 (W) ...
Page 2
... V 4 mV/° mΩ 100 125 90 113 =125° J – 298 3 1.2 nC –1.3 A –0.8 –1.2 V (Note 2) b) 156°C/W when mounted on a minimum pad copper Si3455DV Rev A1 (W) ...
Page 3
... Source Current and Temperature. = -3.5V GS -4.0V -4.5V -5.0V -6.0V -7.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si3455DV Rev A1 ( 1.2 ...
Page 4
... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 156 C/W θJA P(pk ( θJA Duty Cycle 100 Si3455DV Rev A1 (W) 30 1000 ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...