SI3458DV Vishay Siliconix, SI3458DV Datasheet - Page 2

• Manufacturer Part Number: SI3458DV
• Description: N-Channel 60-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si3458DV
Vishay Siliconix
Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2-2
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Rating Characteristics
Continuous Current
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
300 s, duty cycle
a
a
b
2%.
Symbol
V
V
r
r
(BR)DSS
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
I
g
Q
I
SM
t
t
t
SD
S
rr
fs
gs
gd
r
f
g
)
New Product
V
V
V
I
I
DS
DS
D
I
= 30 V, V
= 48 V, V
F
V
V
V
V
V
V
V
V
V
V
30 V V
1 A V
1 A, V
= 1.7 A, di/dt = 100 A/ s
I
Test Condition
DS
GS
GS
DS
S
DS
DS
DS
DD
DD
DS
= 1.7 A, V
= V
= 4.5 V, I
= 4.5 V, I
= 0 V, I
= 10 V, I
= 0 V, V
= 48 V, V
= 5 V, V
= 30 V, R
GEN
30 V R
GS
GS
GS
, I
= 0 V, T
= 10 V, R
,
= 10 V, I
D
D
GS
GS
10 V R
10 V I
GS
D
= 250 A
D
D
GS
= 250 A
L
L
= 2.8 A
= 3.2 A
= 3.2 A
= 30
= 10 V
=
= 0 V
= 0 V
30
J
D
G
20 V
= 150 C
= 3.2 A
= 6
3 2 A
6
Min
60
10
1
0.085
0.110
Typ
4.0
2.0
10
10
20
10
50
8
8
S-61517—Rev. B, 12-Apr-99
Document Number: 70859
Max
0.10
0.13
1.7
1.2
50
16
20
20
40
20
15
90
100
1
Unit
nA
nC
ns
ns
ns
V
V
A
S
A
A
V
A
A
C