SI3493DV-T1 Vishay Siliconix, SI3493DV-T1 Datasheet

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SI3493DV-T1

Manufacturer Part Number
SI3493DV-T1
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 71936
S-41796—Rev. C, 04-Oct-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−20
(V)
J
ti
Ordering Information: Si3493DV-T1
Marking Code:
0.035 @ V
0.048 @ V
0.027 @ V
3 mm
t A bi
r
DS(on)
J
J
a
a
GS
GS
GS
= 150_C)
= 150_C)
t
a
a
= −2.5 V
= −1.8 V
= −4.5 V
(W)
Parameter
Parameter
1
2
3
Top View
TSOP-6
2.85 mm
a
a
Si3493DV-T1—E3 (Lead (Pb)-Free)
93xxx
P-Channel 20-V (D-S) MOSFET
a
6
5
4
I
D
−6.2
−5.2
−7
(A)
A
= 25_C UNLESS OTHERWISE NOTED)
Q
Steady State
Steady State
g
T
T
T
T
t v 5 sec
A
A
A
A
21
(Typ)
= 25_C
= 85_C
= 25_C
= 85_C
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
(3) G
stg
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Ultra-Low On-Resistance
APPLICATIONS
D Load Switch
D PA Switch
D Battery Switch
P-Channel MOSFET
(1, 2, 5, 6) D
Typical
5 secs
(4) S
−3.6
−1.7
2.0
1.0
−7
45
90
25
−55 to 150
−20
−20
"8
Steady State
Maximum
Vishay Siliconix
−5.3
−3.9
−0.9
62.5
1.1
0.6
110
30
Si3493DV
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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SI3493DV-T1 Summary of contents

Page 1

... GS 0.048 @ V = −1 TSOP-6 Top View 2.85 mm Ordering Information: Si3493DV-T1 Si3493DV-T1—E3 (Lead (Pb)-Free) Marking Code: 93xxx ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...

Page 2

... Si3493DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 71936 S-41796—Rev. C, 04-Oct-04 3000 2500 2000 1500 V = 2.5 V 1000 4 25_C J 0.8 1.0 1.2 Si3493DV Vishay Siliconix Capacitance C iss C oss 500 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...

Page 4

... Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 100 125 ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71936. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 −2 − Square Wave Pulse Duration (sec) Si3493DV Vishay Siliconix 1 10 www.vishay.com 5 ...

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