SI3493DV-T1 Vishay Siliconix, SI3493DV-T1 Datasheet
SI3493DV-T1
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SI3493DV-T1 Summary of contents
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... GS 0.048 @ V = −1 TSOP-6 Top View 2.85 mm Ordering Information: Si3493DV-T1 Si3493DV-T1—E3 (Lead (Pb)-Free) Marking Code: 93xxx ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...
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... Si3493DV Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... Source-to-Drain Voltage (V) SD Document Number: 71936 S-41796—Rev. C, 04-Oct-04 3000 2500 2000 1500 V = 2.5 V 1000 4 25_C J 0.8 1.0 1.2 Si3493DV Vishay Siliconix Capacitance C iss C oss 500 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...
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... Si3493DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 100 125 ...
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... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71936. Document Number: 71936 S-41796—Rev. C, 04-Oct-04 −2 − Square Wave Pulse Duration (sec) Si3493DV Vishay Siliconix 1 10 www.vishay.com 5 ...