SI3585DV Vaishali Semiconductor, SI3585DV Datasheet
SI3585DV
Manufacturer Part Number
SI3585DV
Description
N- and P-Channel 20-V (D-S) MOSFET
Manufacturer
Vaishali Semiconductor
Datasheet
1.SI3585DV.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3585DV-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI3585DV-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
26 955
Part Number:
SI3585DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI3585DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.DataSheet.co.kr
Notes
a.
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
N-Channel
P-Channel
3 mm
G1
G2
S2
Parameter
Parameter
V
DS
J
a
–20
20
= 150_C)
a
1
2
3
(V)
Top View
TSOP-6
2.85 mm
N- and P-Channel 20-V (D-S) MOSFET
_
a
6
5
4
Steady State
Steady State
t v 10 sec
T
T
T
T
a
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
0.200 @ V
0.340 @ V
0.125 @ V
0.200 @ V
D1
S1
D2
r
DS(on)
GS
GS
GS
GS
Symbol
Symbol
T
(W)
= –4.5 V
= –2.5 V
R
R
= 4.5 V
= 2.5 V
V
V
J
I
P
, T
thJA
thJF
DM
I
I
GS
DS
D
S
D
stg
_
G
10 secs
1
Typ
1.05
1.15
0.59
N-Channel MOSFET
130
2.4
1.7
93
75
N-Channel
N-Channel
I
D
–1.8
–1.2
D
S
"12
2.4
1.8
1
20
1
(A)
8
Steady State
Max
150
0.75
0.83
0.53
110
90
2.0
1.4
–55 to 150
10 secs
Typ
–1.05
130
–1.8
–1.3
1.15
0.59
93
75
G
2
P-Channel
P-Channel MOSFET
P-Channel
Vishay Siliconix
"12
–20
–7
Steady State
D
S
2
2
Max
110
150
90
–0.75
Si3585DV
–1.5
–1.2
0.83
0.53
www.vishay.com
Unit
_C/W
C/W
Unit
_C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/
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