Si3853DV Vishay Siliconix, Si3853DV Datasheet - Page 4

• Manufacturer Part Number: Si3853DV
• Description: P-Channel 20-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Siliconix

Si3853DV
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
–0.2
–0.4
0.1
10
0.6
0.4
0.2
0.0
0.01
1
0.1
0.00
–50
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
V
T
0.3
SD
J
= 150 C
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
I
D
J
10
– Temperature ( C)
= 250 A
25
0.6
–3
Single Pulse
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.9
T
75
J
= 25 C
10
100
–2
1.2
125
Square Wave Pulse Duration (sec)
1.5
150
New Product
10
–1
1
0.6
0.5
0.4
0.3
0.2
0.1
0
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
V
1
Notes:
= 1.2 A
P
GS
DM
JM
– Gate-to-Source Voltage (V)
0.1
– T
A
t
1
= P
2
Time (sec)
t
2
DM
Z
thJA
I
thJA
D
100
= 1.8 A
t
t
(t)
1
2
= 130 C/W
S-61846—Rev. A, 04-Oct-99
1
Document Number: 70979
3
600
4
10
5
30