TLP3052S Toshiba America Electronic Components, Inc., TLP3052S Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
TLP3052S
Manufacturer Part Number
TLP3052S
Description
Pin = 5 ;; Package = Dip ;; Led Trigger Current Ift (Max.) (mA) = 7-10 ;; Blocking Voltage VDRM (V) = 600 ;; On-state Current (mA Max.) = 100 ;; Zero Crossing = no ;; ISOlation Voltage BVS (Vrms) = 5000 ;; Features = Short Body of TLP3052 ;; Addition
Manufacturer
Toshiba America Electronic Components, Inc.
Datasheet
1.TLP3052S.pdf
(6 pages)
- Current page: 4 of 6
- Download datasheet (201Kb)
TLP3051(S), TLP3052(S)
4
2002-07-17
Related parts for TLP3052S
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![TLP-801A](/images/no-image3.png)
Part Number:
Description:
INFRARED LED + PHOTOTRANSISTOR
Manufacturer:
Toshiba Semiconductor
Datasheet:
![1SS250](/images/no-image3.png)
Part Number:
Description:
Toshiba Diode Silicon Epitaxial Planar Type
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![1SS272](/images/no-image3.png)
Part Number:
Description:
Toshiba Diode Silicon Epitaxial Planar Type
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![RN4603](/images/no-image3.png)
Part Number:
Description:
Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![RN4605](/images/no-image3.png)
Part Number:
Description:
Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![RN4607](/images/no-image3.png)
Part Number:
Description:
Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![RN4608](/images/no-image3.png)
Part Number:
Description:
Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![RN4911](/images/no-image3.png)
Part Number:
Description:
Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![RN2113FT](/images/no-image3.png)
Part Number:
Description:
Toshiba Transistor Silicon PNP Epitaxial Type (PCT Process) (bias Resistor Built-in Transistor)
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![1SS293](/images/no-image3.png)
Part Number:
Description:
Toshiba Diode Silicon Epitaxial Schottky Barrier Type
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![GT50J322_06](/images/no-image3.png)
Part Number:
Description:
Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![TSS1J47S](/images/no-image3.png)
Part Number:
Description:
Toshiba Solid State AC Relay
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![TSS1G47S](/images/no-image3.png)
Part Number:
Description:
Toshiba Solid State AC Relay
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![TSS1G45S](/images/no-image3.png)
Part Number:
Description:
Toshiba Solid State AC Relay
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet:
![TSS1J45S](/images/no-image3.png)
Part Number:
Description:
Toshiba Solid State AC Relay
Manufacturer:
Toshiba America Electronic Components, Inc.
Datasheet: