Si5404DC-T1 Vishay Siliconix, Si5404DC-T1 Datasheet - Page 3

• Manufacturer Part Number: Si5404DC-T1
• Description: N-Channel 2.5-V (G-S) MOSFET
• Manufacturer: Vishay Siliconix

Document Number: 71057
S-31989—Rev. C, 13-Oct-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
20
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5.2 A
0.2
On-Resistance vs. Drain Current
V
= 10 V
GS
4
3
V
SD
Q
= 2.5 V
g
- Source-to-Drain Voltage (V)
I
0.4
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
8
6
T
J
= 150_C
0.6
12
9
0.8
V
GS
= 4.5 V
T
16
12
J
= 25_C
1.0
1.2
20
15
1800
1500
1200
0.06
0.05
0.04
0.03
0.02
0.01
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
D
- 25
GS
= 5.2 A
C
= 4.5 V
1
iss
4
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
C
oss
I
D
12
3
75
= 5.2 A
Si5404DC
100
16
www.vishay.com
4
125
150
20
5
3