SI5435DC Vishay Siliconix, SI5435DC Datasheet
SI5435DC
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SI5435DC Summary of contents
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... V GS --30 --30 0.080 @ V = --4 1206-8 ChipFETt Bottom View Ordering Information: Si5435DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Source Current a a Maximum Power Dissipation ...
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... Si5435DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage ...
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... Source-to-Drain Voltage (V) SD Document Number: 71144 S-21251—Rev. B, 05-Aug-02 1200 900 600 300 24 30 1.6 1.4 1.2 1.0 0.8 0 0.16 0.12 0. 25_C J 0.04 0.00 1.0 1.2 1.4 Si5435DC Vishay Siliconix Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 4 --50 -- 100 ...
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... Si5435DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 --0.2 --0.4 --50 -- Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...