SI5475DC Vishay Siliconix, SI5475DC Datasheet - Page 4
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SI5475DC
Manufacturer Part Number
SI5475DC
Description
P-Channel 12-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet
1.SI5475DC.pdf
(4 pages)
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4
Si5475DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
--0.00
--0.05
--0.10
--0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.01
0.01
0.1
0.1
--50
2
1
2
1
10
10
- -4
- -4
--25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
-- Temperature (_C)
25
10
- -3
50
10
Single Pulse
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
- -3
D
= 1
Normalized Thermal Transient Impedance, Junction-to-Foot
75
m
A
10
100
- -2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
- -2
10
- -1
10
1
50
40
30
20
10
- -1
0
10
- -3
10
- -2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
Single Pulse Power
DM
JM
10
- -1
-- T
Time (sec)
t
1
1
A
= P
t
2
DM
1
Z
thJA
thJA
100
S-21251—Rev. B, 05-Aug-02
t
t
1
2
(t)
Document Number: 71324
= 80_C/W
10
100
600
10
600