SI5504DC Vishay Siliconix, SI5504DC Datasheet

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SI5504DC

Manufacturer Part Number
SI5504DC
Description
Complementary 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI5504DC-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI5504DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.DataSheet.co.kr
Notes
a.
b.
c.
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the
singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
N-Channel
P-Channel
Ordering Information: Si5504DC-T1
D
1
1206-8 ChipFET
D
Parameter
V
1
Bottom View
DS
J
a
-30
D
30
S
= 150_C)
2
a
1
(V)
D
G
Parameter
2
1
_
Complementary 30-V (D-S) MOSFET
S
2
a
1
G
2
a
b, c
T
T
T
T
0.290 @ V
0.165 @ V
0.143 @ V
0.085 @ V
A
A
A
A
= 25_C
= 85_C
= 25_C
= 85_C
r
DS(on)
Marking Code
A
GS
GS
EA XX
GS
GS
= 25_C UNLESS OTHERWISE NOTED)
(W)
= -4.5 V
= -10 V
= 4.5 V
= 10 V
Symbol
Steady State
Steady State
T
t v 5 sec
Part # Code
V
V
J
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
Lot Traceability
and Date Code
5 secs
"3.9
"2.8
1.8
2.1
1.1
Symbol
N-Channel
R
R
I
thJA
thJF
D
"3.9
"3.0
"2.8
"2.1
G
1
(A)
30
N-Channel MOSFET
Steady State
"2.9
"2.1
0.9
1.1
0.6
D
S
1
1
Typical
-55 to 150
50
90
30
"20
"10
260
5 secs
"2.8
"2.0
-1.8
2.1
1.1
Maximum
P-Channel
Vishay Siliconix
G
2
110
60
40
P-Channel MOSFET
-30
Steady State
Si5504DC
"2.1
"1.5
-0.9
1.1
0.6
S
D
2
2
www.vishay.com
Unit
_C/W
C/W
Unit
_
_C
W
V
A
2-1
Datasheet pdf - http://www.DataSheet4U.net/

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SI5504DC Summary of contents

Page 1

... Bottom View Ordering Information: Si5504DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage _ Continuous Drain Current (T = 150_C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... Si5504DC Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 71056 S-21251—Rev. B, 05-Aug- 1.5 2.0 2.5 3 Si5504DC Vishay Siliconix N−CHANNEL Transfer Characteristics -125_C C 2 25_C - Gate-to-Source Voltage (V) GS Capacitance 400 ...

Page 4

... Si5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.00 0.2 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 = 250 0.2 -0.0 -0.2 -0.4 -0.6 -0.8 -50 - Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 2 25_C J 0.6 0.8 1.0 1 100 125 ...

Page 5

... Document Number: 71056 S-21251—Rev. B, 05-Aug-02 Normalized Thermal Transient Impedance, Junction-to-Foot - Square Wave Pulse Duration (sec 1.5 2.0 2.5 3 Si5504DC Vishay Siliconix N−CHANNEL - P−CHANNEL Transfer Characteristics -55_C C 8 25_C ...

Page 6

... Si5504DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 2 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 0.1 0.00 0.3 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 0.2 = 250 0.0 -0.2 -0.4 -50 - Temperature (_C) J www ...

Page 7

... S-21251—Rev. B, 05-Aug-02 Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot - Square Wave Pulse Duration (sec) Si5504DC Vishay Siliconix P−CHANNEL Notes Duty Cycle ...

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