SI5513DC Vishay Siliconix, SI5513DC Datasheet

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SI5513DC

Manufacturer Part Number
SI5513DC
Description
Complementary 20-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
b.
c.
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
i
N Channel
N-Channel
P Channel
P-Channel
J
Ordering Information: Si5513DC-T1
ti
t A bi
D
1
1206-8 ChipFETr
D
Parameter
V
1
Bottom View
DS
J
J
a
a
−20
D
20
20
S
= 150_C)
= 150_C)
t
20
2
a
a
1
(V)
D
G
Parameter
2
1
Complementary 20-V (D-S) MOSFET
S
Si5513DC-T1—E3 (Lead (Pb)-Free)
2
a
a
1
0.155 @ V
0.260 @ V
G
0.075 @ V
0.134 @ V
2
r
a
DS(on)
b, c
T
T
T
T
A
A
A
A
GS
GS
GS
GS
= 25_C
= 85_C
= 25_C
= 85_C
(W)
= −4.5 V
= −2.5 V
= 4.5 V
= 2.5 V
Marking Code
A
EB XX
= 25_C UNLESS OTHERWISE NOTED)
Symbol
Steady State
Steady State
T
t v 5 sec
Part # Code
V
V
J
I
P
P
, T
DM
I
I
I
DS
GS
D
D
S
D
D
I
stg
D
−2.9
−2.2
Lot Traceability
and Date Code
4.2
3.1
(A)
5 secs
4.2
3.0
1.8
2.1
1.1
Symbol
Q
N-Channel
R
R
R
g
thJA
thJF
(Typ)
4
4
3
3
20
10
Steady State
3.1
2.2
0.9
1.1
0.6
G
1
Typical
N-Channel MOSFET
−55 to 150
50
90
30
"12
260
D
S
5 secs
1
1
−2.9
−2.1
−1.8
2.1
1.1
Maximum
P-Channel
Vishay Siliconix
110
G
60
40
−20
−10
2
Steady State
P-Channel MOSFET
Si5513DC
−2.1
−1.5
−0.9
1.1
0.6
S
D
www.vishay.com
2
2
Unit
_C/W
C/W
Unit
_C
_C
W
W
V
V
A
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI5513DC Summary of contents

Page 1

... ChipFETr Bottom View Ordering Information: Si5513DC-T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation ...

Page 2

... Si5513DC Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate Body Leakage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain Source On State Resistance ...

Page 3

... Q − Total Gate Charge (nC) g Document Number: 71186 S-42138—Rev. F, 15-Nov- thru 2 1.5 V 1.5 2.0 2 Si5513DC Vishay Siliconix N−CHANNEL Transfer Characteristics −55_C C 25_C 8 6 125_C 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) GS Capacitance ...

Page 4

... Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 −0.0 −0.2 −0.4 −0.6 −50 − − Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www ...

Page 5

... S-42138—Rev. F, 15-Nov-04 Normalized Thermal Transient Impedance, Junction-to-Foot −3 − Square Wave Pulse Duration (sec 1.5 V 1.5 2.0 2 Si5513DC Vishay Siliconix N−CHANNEL − P−CHANNEL Transfer Characteristics −55_C C 8 25_C 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) ...

Page 6

... Si5513DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 2 0.0 0.5 1.0 Q − Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C J 1 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.3 0.2 0.1 0.0 −0.1 −0.2 −50 −25 ...

Page 7

... Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot −3 − Square Wave Pulse Duration (sec) For related documents such as package/tape drawings, part marking, and reliability data, see Si5513DC Vishay Siliconix P−CHANNEL Notes ...

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