SI5519DU Vishay Siliconix, SI5519DU Datasheet - Page 8

• Manufacturer Part Number: SI5519DU
• Description: N- and P-Channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si5519DU
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.20
0.16
0.12
0.08
0.04
0.00
10
20
15
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
5
0
0
0
0
I
D
= 5.4 A
V
GS
2
1
= 2.5 V
V
5
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
4
D
- Drain Current (A)
Gate Charge
V
2
DS
V
= 10 V
GS
10
V
6
GS
V
= 5 V thru 3 V
GS
= 16 V
3
= 4.5 V
8
15
V
V
V
GS
GS
GS
4
10
= 2.5 V
= 2 V
= 1.5 V
12
20
5
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.5
1.0
0.5
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
rss
4
V
V
0.5
DS
T
Transfer Characteristics
GS
0
J
T
- Junction Temperature (°C)
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
= 25 °C
25
Capacitance
T
8
C
= 125 °C
C
1.0
50
iss
S-81449-Rev. B, 23-Jun-08
Document Number: 74406
V
I
12
D
GS
75
= 4 A
= 4.5 V
C
oss
V
I
100
D
T
1.5
GS
C
= 4 A
16
= - 55 °C
= 2.5 V
125
150
2.0
20
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