SI6463DQ Fairchild Semiconductor, SI6463DQ Datasheet
SI6463DQ
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SI6463DQ Summary of contents
Page 1
... C unless otherwise noted A Ratings (Note 1) (Note 1a) (Note 1b) –55 to +150 (Note 1a) (Note 1b) Reel Size Tape width 13’’ 16mm April 2001 = 0.0125 @ V = –4.5 V DS(ON 0.018 @ V = –2.5 V DS(ON Units – –8.8 A –50 1 C/W 208 Quantity 3000 units Si6463DQ Rev. A(W) ...
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... CA Min Typ Max Units –20 V –12 mV/ C –1 A –100 nA 100 nA –0.6 –0.8 –1.5 V 3 – 5045 pF 1035 pF 549 130 208 ns 80 128 –1.2 A –0.6 –1.2 V Si6463DQ Rev. A(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4.0V -4. DIRAIN CURRENT ( -4. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si6463DQ Rev. A( 1.4 ...
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... ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 208°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 208 °C/W JA P(pk ( Duty Cycle 100 Si6463DQ Rev. A(W) 12 1000 2 1000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...