SI6943DQ Fairchild Semiconductor, SI6943DQ Datasheet
SI6943DQ
Manufacturer Part Number
SI6943DQ
Description
Dual P-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI6943DQ.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI6943DQ
Manufacturer:
SILICONIX
Quantity:
20 000
Part Number:
SI6943DQ-T1
Manufacturer:
SILICONIX
Quantity:
20 000
Si6943DQ
Dual P-Channel 2.5V Specified PowerTrench
General Description
This P-Channel –2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (–2.5V to –8V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Load switch
Motor drive
DC/DC conversion
Power management
J
DSS
GSS
D
, T
JA
Device Marking
STG
6943
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
– Continuous
– Pulsed
Si6943DQ
Device
Parameter
Pin 1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1)
Features
–2.5 A, –12 V,
Extended V
Low gate charge (4.6nC typical)
High performance trench technology for extremely
Low profile TSSOP-8 package
low R
DS(ON)
MOSFET
1
2
3
4
GSS
Tape width
range ( 8V) for battery applications
–55 to +150
12mm
R
R
Ratings
DS(ON)
DS(ON)
–2.5
–12
–20
100
125
1.0
0.6
8
= 110 m
= 180 m
8
7
6
5
@ V
@ V
Sept 2001
Si6943DQ Rev. B (W)
2500 units
GS
GS
Quantity
= –4.5 V.
= –2.5V.
Units
C/W
W
V
V
A
C
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