SI6955 Fairchild Semiconductor, SI6955 Datasheet

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SI6955

Manufacturer Part Number
SI6955
Description
Dual 30V P-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Si6955DQ
Dual 30V P-Channel PowerTrench
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild's Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
, T
Load switch
Battery protection
DC/DC conversion
Power management
Device Marking
STG
6955
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
– Continuous
– Pulsed
Si6955DQ
Device
Parameter
Pin 1
T
A
=25
o
C unless otherwise noted
   
Reel Size
MOSFET
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1b)
(Note 1)
Features
• –2.5 A, –30 V,
• Extended V
• Low gate charge
• High performance trench technology for extremely
• Low profile TSSOP-8 package
low R
DS(ON)
1
2
3
4
GSS
Tape width
range (±20V) for battery applications
12mm
-55 to +150
R
R
Ratings
DS(ON)
DS(ON)
–2.5
–30
±20
–20
100
125
1.0
0.6
= 85 mΩ @ V
= 190 mΩ @ V
January 2002
8
7
6
5
Si6955DQ Rev C(W)
2500 units
GS
GS
Quantity
= –10 V.
= –4.5V.
Units
°C/W
°C
W
V
V
A

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SI6955 Summary of contents

Page 1

... Ratings (Note 1) (Note 1a) (Note 1b) -55 to +150 (Note 1a) (Note 1b) Reel Size Tape width 13’’ 12mm January 2002 = 85 mΩ –10 V. DS(ON 190 mΩ –4.5V. DS(ON Units – ±20 –2.5 A –20 1.0 W 0.6 °C 100 °C/W 125 Quantity 2500 units Si6955DQ Rev C(W) ...

Page 2

... 298 1.2 nC –0.83 A –0.8 –1 125°C/W when mounted on a minimum pad copper for single operation and 104°C/W for dual operation. Si6955DQ Rev C(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -4.5V GS -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si6955DQ Rev C( 1.2 ...

Page 4

... DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 125 C/W θJA P(pk ( θJA Duty Cycle 100 1000 Si6955DQ Rev C(W) 30 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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