SI6966 Fairchild Semiconductor, SI6966 Datasheet

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SI6966

Manufacturer Part Number
SI6966
Description
Dual N-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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SI6966DQ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Load switch
Motor drive
DC/DC conversion
Power management
J
DSS
GSS
D
, T
JA
Device Marking
STG
6966
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
TSSOP-8
– Continuous
– Pulsed
SI6966DQ
Device
Parameter
Pin 1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Features
5.5 A, 20 V.
Extended V
Low gate charge
High performance trench technology for extremely
Low profile TSSOP-8 package
low R
DS(ON)
GSS
Tape width
R
R
range ( 12V) for battery applications
1
2
3
4
DS(ON)
DS(ON)
12mm
-55 to +150
Ratings
125
208
5.5
1.0
0.6
20
30
12
= 0.021
= 0.035
@ V
@ V
GS
GS
April 2001
8
7
6
5
3000 units
SI6966DQ Rev A(W)
= 4.5 V
= 2.5 V
Quantity
Units
C/W
W
V
V
A
C

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SI6966 Summary of contents

Page 1

... Reel Size 13’’ April 2001 R = 0.021 @ V = 4.5 V DS(ON 0.035 @ V = 2.5 V DS(ON) GS range ( 12V) for battery applications Ratings Units 5 1.0 W 0.6 -55 to +150 C 125 C/W 208 Tape width Quantity 12mm 3000 units SI6966DQ Rev A(W) ...

Page 2

... determined by the user's board design. CA Min Typ Max Units mV 100 nA –100 nA 0.6 0.8 1.5 V –3.2 mV 1082 pF 277 pF 130 0.83 A 0.7 1.2 V SI6966DQ Rev. A (W) ...

Page 3

... Source Current and Temperature 2.0V GS 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD SI6966DQ Rev 1.2 ...

Page 4

... ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 208°C 25°C A Power Dissipation. R ( 208 °C/W JA P(pk ( Duty Cycle 100 SI6966DQ Rev. A (W) 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...

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