ZXMC4A16DN8 Zetex Semiconductors, ZXMC4A16DN8 Datasheet - Page 4

• Manufacturer Part Number: ZXMC4A16DN8
• Description: COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(
ZXMC4A16DN8
3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(2) (3)
(1)
(3)
(3)
(1) (3)
(1)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
DSS
GSS
amb
(BR)DSS
GS(th)
DS(on)
fs
= 25°C unless otherwise stated)
4
2%.
MIN.
1.0
40
TYP.
770
8.6
3.3
4.7
2.5
3.8
0.8
92
61
29
14
17
20
16
MAX. UNIT CONDITIONS
0.050
0.075
0.95
100
0.5
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 1 - NOVEMBER 2004
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= 250mA, V
= 4.5A
=25°C, I
=25°C, I
≅6.0 , V
=40V, V
= 15V, I
= 40V, V
= 30V, V
=±20V, V
= 10V, I
= 4.5V, I
= 30V, I
=0V
S
S
= 4.5A,
= 2.5A,
D
GS
D
D
GS
D
GS
GS
= 4.5A
= 4.5A
= 1A
DS
GS
= 3.2A
DS
=0V
= 10V
=0V
= 10V
=0V
=0V
=V
GS