ZXMHC6A07T8 Zetex Semiconductors, ZXMHC6A07T8 Datasheet - Page 4

• Manufacturer Part Number: ZXMHC6A07T8
• Description: COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
• Manufacturer: Zetex Semiconductors

N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMHC6A07T8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
amb
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
4
MIN.
60
1
TYP.
19.5
1.65
0.67
0.82
0.85
20.5
21.3
166
2.3
8.7
1.8
1.4
4.9
2.0
3.2
MAX.
0.300
0.450
0.95
100
3.0
1
UNIT CONDITIONS
µA
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=250µA, V
=250µA, V
=1.8A
=1.8A
GS
=25°C, I
=25°C, I
ISSUE 1 - JULY 2004
≅6.0Ω, V
=60V, V
=15V,I
=40V, V
=30V,V
=30V,V
=10V, I
=4.5V, I
=0V
=30V, I
=±20V, V
D
S
F
D
GS
GS
=1.8A,
GS
=1.8A
D
=0.45A,
GS
D
GS
=1.8A
GS
DS
=1.8A
=1.3A
=5V,
=10V,
DS
=10V
=0V
=0V,
= V
=0V
=0V
GS