ZXMN3AM832 Zetex Semiconductors, ZXMN3AM832 Datasheet

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ZXMN3AM832

Manufacturer Part Number
ZXMN3AM832
Description
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet
www.DataSheet4U.com
SUMMARY
V
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DNB
MPPS™ Miniature Package Power Solutions
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMN3AM832TA
ZXMN3AM832TC
(BR)DSS
Low On - Resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
DC-DC Converters
Power Management Functions
Disconnection switches
Motor Control
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
= 30V; R
DS(ON)
REEL
13’‘
7
’‘
= 0.12 ; I
WIDTH
TAPE
8mm
8mm
D
= 3A
10000 units
QUANTITY
3000 units
PER REEL
1
PINOUT
ZXMN3AM832
D2
G2
3mm x 2mm Dual MLP
4
5
3x2mm Dual Die MLP
underside view
D2
S2
6
3
D1
7
2
G1
D1
8
1
S1

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ZXMN3AM832 Summary of contents

Page 1

... DEVICE MARKING DNB ISSUE 1 - OCTOBER 2005 = 0. DS(ON) D REEL TAPE QUANTITY WIDTH PER REEL 7 ’‘ 8mm 3000 units 13’‘ 8mm 10000 units 1 ZXMN3AM832 3x2mm Dual Die MLP PINOUT 3mm x 2mm Dual MLP ...

Page 2

... ZXMN3AM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V Pulsed Drain Current Continuous Source Current (Body Diode)(b)(f) Pulsed Source Current (Body Diode) Power Dissipation at TA=25°C (a)(f) Linear Derating Factor Power Dissipation at TA=25°C (b)(f) Linear Derating Factor Power Dissipation at TA=25° ...

Page 3

... Single Pulse 50 Note (f) D=0. 100 1k 0.1 Thermal Resistance v Board Area 1oz copper Note (g) 10 100 3 ZXMN3AM832 2oz Cu Note (e)(g) 2oz Cu Note (a)(f) 1oz Cu Note (d)( 100 125 150 Temperature (°C) Derating Curve 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (g) ...

Page 4

... ZXMN3AM832 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... Drain-Source Voltage (V) DS Output Characteristics 1.6 1.4 1.2 1.0 0.8 0.6 0.4 4.0 4.5 5.0 -50 Tj Junction Temperature (°C) Normalised Curves v Temperature 150°C 4. 10V 0.1 0.4 0 Source-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 5 ZXMN3AM832 10V 7V 5V 4.5V 4V 3. 10V 2. DS(on) V GS(th 250uA 100 150 T = 25° ...

Page 6

... ZXMN3AM832 300 250 200 C ISS 150 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS 2. 1MHz OSS 4 C RSS Gate-Source Voltage v Gate Charge 15V Charge (nC) ISSUE 1 - OCTOBER 2005 ...

Page 7

... BSC 0.032 0.040 0 Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN3AM832 INCHES MAX. MIN. MAX. 0.0256 BSC 0.0787 BSC 0.63 0.017 0.0249 0.36 0.006 0.014 ...

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