ZXMN6A09K Zetex Semiconductors, ZXMN6A09K Datasheet - Page 4

• Manufacturer Part Number: ZXMN6A09K
• Description: N-channel enhancement mode MOSFET
• Manufacturer: Zetex Semiconductors

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 5 - January 2007
© Zetex Semiconductors plc 2007
NOTES:
Parameter
Static
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse Recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
amb
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated)
300 s; duty cycle
Min.
1.0
60
4
1426
Typ.
32.5
14.5
0.85
25.6
26.0
134
4.8
4.6
7.0
4.7
15
64
15
29
2%.
0.040
0.060
Max.
0.95
100
3.0
1
Unit Conditions
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMN6A09K
I
V
V
I
V
V
V
V
f=1MHz
V
R
(refer to test circuit)
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= 250 A, V
= 250 A, V
= 5.6A
= 7.3A
=25°C, I
=25°C, I
≅6.0 , V
=0V
= 60V, V
= 15V, I
= 30V, V
= 30V, V
= 30V, V
=±20V, V
= 10V, I
= 4.5V, I
= 30V, I
www.zetex.com
S
S
= 6.6A,
= 3A,
D
GS
D
D
D
GS
GS
GS
GS
= 7.3A
= 7.3A
= 1A
DS
GS
DS
= 5.6A
= 10V
=0V
=0V
= 4.5V
= 10V
=0V
=V
=0V
GS