ZXMP62M832 Zetex Semiconductors, ZXMP62M832 Datasheet - Page 4

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ZXMP62M832

Manufacturer Part Number
ZXMP62M832
Description
MPPS Miniature Package Power Solutions DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
Zetex Semiconductors
Datasheet
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width 300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP62M832
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated).
2% .
4
MIN.
0.56
-0.7
-20
TYP.
11.2
10.2
14.9
150
2.9
6.7
5.2
5.6
70
30
MAX.
-0.95
0.6
0.9
3.5
0.5
1.5
-1
100
PROVISIONAL ISSUE A - MAY 2002
UNIT CONDITIONS.
nA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
I
V
V
V
V
f=1MHz
V
R
(Refer to test circuit)
V
I
(Refer to test circuit)
T
V
T
di/dt= 100A/ s
D
V
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
GS
=-250 A, V
GS
=-250 A, V
=-0.61A
=25°C, I
=25°C, I
=6.0 , R
=-20V, V
=-10V,I
=-15V, V
=-16V,V
=-4.5V, I
=-2.7V, I
=0V
= 12V, V
=-10V, I
S
F
D
=-0.61A,
D=11
=-0.61A,
GS
D
D
=-0.31A
D
GS
GS
GS
DS
=-0.61A
=-0.31A
=-0.93A
DS
=-4.5V,
=0V
=0V,
=0V
= V
=0V
GS

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