ZXMP7A17K Zetex Semiconductors, ZXMP7A17K Datasheet - Page 4

• Manufacturer Part Number: ZXMP7A17K
• Description: P-channel enhancement mode MOSFET
• Manufacturer: Zetex Semiconductors

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
(*) Measured under pulsed conditions. Pulse width
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
NOTES:
Parameter
Static
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage
Gate-source threshold voltage V
Static drain-source on-state
resistance
Forward transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
(‡)
(*)
(†) (‡)
(*)
(‡)
(‡)
(*)(‡)
Symbol
V
I
I
R
g
C
C
t
t
V
t
Q
C
t
t
Q
Q
Q
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
300 s; duty cycle
Min.
-1.0
-70
4
-0.85
Typ.
42.5
27.9
1.77
3.66
29.8
38.5
635
4.4
2.5
3.4
9.6
52
18
8
Max.
-0.95
0.16
0.25
100
2%.
-1
Unit
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ZXMP7A17K
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
= -250 A, V
= -250 A, V
= -2.1A
= -2.1A
=25°C, I
=25°C, I
≅6.0 , V
= -70V, V
= -15V, I
= -40V, V
= -35V, V
= -35V, V
=±20V, V
= -10V, I
= -4.5V, I
= -35V, I
=0V
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S
S
= -2.0A,
= -2.1A,
GS
D
D
D
D
GS
DS
GS
GS
GS
= -2.1A
= -2.1A
= -1A
GS
DS
= -10V
= -1.7A
=0V
=0V
=0V
= -5V
= -10V
=V
=0V
GS