RMPA1955-99 Raytheon Company, RMPA1955-99 Datasheet

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RMPA1955-99

Manufacturer Part Number
RMPA1955-99
Description
Gsm/gprs 3V Tri-band Gsm/dcs/pcs Power Amplifier Module 880-1910 MHZ
Manufacturer
Raytheon Company
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
RMPA1955-99
Manufacturer:
Fairchild
Quantity:
2 700
www.raytheonrf.com
Characteristics
Description
Maximum
Electrical
Features
Absolute
Ratings
1
Characteristic performance data and specifications are subject to change without notice.
RMPA1955-99
3V Tri-Band GSM/GPRS Power Amplifier
Module
The RMPA1955-99 is a Tri-band GSM/GPRS Power Amplifier (PA) Module which uses Raytheon’s InGaP
Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip
carrier module incorporates a band select switch, Analog power control, and is internally input and output
matched.
Revised December 6, 2001
Page 1
Notes:
1. Pulsed operation with pulse width=1154µs, duty cycle=25%. 50 ohm system. Vcc=3.5 V, Ta=+25ºC.
2. Vcc = 3.5V, V
3. Vcc = 3.5V, V
4. Pin = 6 dBm, BW = 100 kHz, F
5. Vcc=4.0V
6. Vcc = 3.5V, V
Parameter
Frequency - GSM
Frequency - DCS
Frequency- PCS
Input Power-GSM
Input Power-DCS/PCS
Power Out-GSM
Power Out-DCS
Power Out-PCS
PAE-GSM
PAE-DCS/PCS
Isolation
Input VSWR (50 )
50 ohms internally input and output matched
High Efficiency: GSM = 55%, DCS/PCS = 50%
Compact LCC Package: 11.6 x 9.1 x 1.7mm
On board band select and output power control
GPRS Class 10 capable
6
2
2
PC
PC
PC
2
2
= 1.9V, Pin = 6 dBm
= 0V, V
= 0.1V, Pin= 6 dBm
2
Parameter
Supply DC Voltage
Power Control Voltage
Band Select Voltage
RF Input Power
Case Operating Temperature
Storage Temperature
Duty Cycle at Max Power
(under no RF)
BS
= 0V
0
1710
1850
34.5
31.9
Min
880
= +/- 20 MHz.
50
42
2.0:1
35.0
32.5
31.9
Typ
-35
55
50
8
8
1910
915
1785
Max
Symbol
V
MHz
MHz
MHz
dBm
dBm
dBm
dBm
dBm
dBm
Unit
Tstg
SUP1,2
V
V
Pin
%
---
Tc
%
PC
BS
Parameter
Harmonics (2fo to 7fo)
Noise Floor GSM
Noise Floor DCS
Leakage Current
Control Voltage (V
Control Current (I
Band Select (V
Load mismatch VSWR
Supply Voltage (Vcc)
-55 to +150
-40 to +85
GSM
DCS/PCS
(no damage)
Value
+6.5
+15
+3
+3
25
BS
3
4
)
4
PC
PC
Units
dBm
)
)
%
V
V
V
C
C
5
ADVANCED INFORMATION
Min
0.1
2.0
2.8
(Photo TBS)
0
Raytheon RF Components
10:1
Typ
-35
-84
-76
3.5
10
1
Andover, MA 01810
362 Lowell Street
Max
1.9
0.5
2.8
5.0
dBm
Unit
dBc
mA
dB
---
V
V
V
V
A

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RMPA1955-99 Summary of contents

Page 1

... Module Description The RMPA1955- Tri-band GSM/GPRS Power Amplifier (PA) Module which uses Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module incorporates a band select switch, Analog power control, and is internally input and output matched ...

Page 2

... Figure 1. The functional block diagram of the packaged product is provided in Figure 2. It should be noted that RMPA1955-99 requires very minimal external passive components for DC bias and no external components for RF matching circuits. Figure 3 shows a typical layout of an evaluation board ...

Page 3

... RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module Test Procedure The following sequence must be followed to properly test the amplifier: for the evaluation board Step 1: Turn off RF input power. Step 2: Use GND terminal of the evaluation board for the ground of the DC supplies. Set V Step 3: Apply supply voltages of +3 the board ...

Page 4

... RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module Performance Data Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 6, 2001 Page 4 RMPA1955, GSM Band Vsup = +3 900 MHz, Pin = +6 dBm 40 30 Pout 20 Effic 10 0 -10 -20 -30 -40 -50 0.2 0.4 0.6 0.8 1.0 1.2 Vpc (V) RMPA1955, DCS Band Vsup = +3 ...

Page 5

... RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module Application Precautions to Avoid Permanent Device Damage: Information – Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. ...

Page 6

... RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module Figure 4 240 Recommended Solder 220 Reflow Profile 200 180 160 140 120 100 Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 6, 2001 Page 6 183°C 1°C/Sec ...

Page 7

Worldwide Sales Representatives North D&L Technical Sales 6139 S. Rural Road, #102 America Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. dlarizona@aol.com Hi-Peak Technical Sales P.O. Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com Europe Sangus OY Lunkintie ...

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