VN05 STMicroelectronics, VN05 Datasheet - Page 4

• Manufacturer Part Number: VN05
• Description: HIGH SIDE SMART POWER SOLID STATE RELAY
• Manufacturer: STMicroelectronics

VN05H
ELECTRICAL CHARACTERISTICS (Continued)
PROTECTION AND DIAGNOSTICS
(*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
( ) Status determinaion > 100 s after the switching edge.
Note 1: Above V
reaches thermal shutdown temperature.
4/10
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140
temperature returns to about 125
automatically turned on again. To ensur the
protection in all V
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above V
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
V
Symbol
V
STAT
V
SCL
T
I
I
I
T
USD
TSD
OV
AV
OL
R
( )
( ) Status Voltage Output
CC
Low
Under Voltage Shut
Down
Status Clamp Voltage
Over Current
Average Current in
Short Circuit
Open Load Current
Level
Termal Shut-Down
Temperature
Reset Temperature
CC
= 36V the output voltage is clamped
= 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature
Parameter
THE
CC
conditions and in all the
DEVICE
o
o
C. When the
C the switch is
I
I
I
R
R
STAT
STAT
STAT
LOAD
LOAD
AGAINST
= 1.6 mA
= 10 mA
= -10 mA
< 10 m
< 10 m
Test Conditions
T
c
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
-
-
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of V
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
= 85
If the input is pulled to power GND, a negative
voltage of -V
thresholds and V
respect to power GND).
The undervoltage shutdown level is increased
by V
o
F
C
.
F
is seen by the device. (V
Min.
STAT
140
125
5
are increased by V
IH
, V
Typ.
-0.7
1.4
6
IL
and V
Max.
180
0.4
5.5
20
STAT
Unit
IL
mA
F
o
o
takes
V
V
V
A
A
v
, V
C
C
with
IH