2SJ130 Hitachi Semiconductor, 2SJ130 Datasheet
2SJ130
Available stocks
Related parts for 2SJ130
2SJ130 Summary of contents
Page 1
... Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline DPAK Gate 2. Drain 3 ...
Page 2
... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown ...
Page 3
... V –1.6 –1.2 –5 V –0.8 –0.4 = –4 V –40 –50 0 (V) DS 2SJ130(L), 2SJ130(S) Maximum Safe Operation Area Ta = 25°C –10 –20 –50 –100 –200 Drain to Source Voltage V (V) DS Typical Transfer Characteristics –25° 25°C C 75° – ...
Page 4
Static Drain to Source on State Resistance (on) Forward Transfer Admittance yfs (S) Drain to Source Saturation Voltage V (V) DS (on) Static Drain to Source on State Resistance (on) ...
Page 5
RDrain to Source V (V) DS Gate to Source Voltage V (V) GS Switching Time t (ns) Forward Transfer Admittance yfs (S) Capacitance C (pF) ...
Page 6
... Normalized Transient Thermal Impedance vs. Pulse Width 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 100 Switching Time Test Circuit Vin Monitor 50 Vin – Reverse Drain Current vs. Source To Drain Voltage –2 Pulse Test –1.6 –1.2 –0.8 –0.4 –5 V, – –0.4 – ...
Page 7
Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...
Page 8
... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...