2SJ501 Sanyo Semicon Device, 2SJ501 Datasheet - Page 3

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2SJ501

Manufacturer Part Number
2SJ501
Description
Ultrahigh-Speed Switching Applications
Manufacturer
Sanyo Semicon Device
Datasheet

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1000
1000
1000
0.25
900
800
700
600
500
400
300
200
100
100
100
1.0
0.3
0.2
0.1
10
10
0
-60
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
3
-40
-2
5
20
-20
7
-4
Drain-to-Source Voltage, V
Ciss,Coss,Crss - V DS
Ambient Temperature, Ta – ˚C
Ambient Temperature, Ta – ˚C
-0.1
40
0
-6
SW Time - I D
R DS(on) - Ta
Drain Current, I
20
60
P D - Ta
-8
2
40
-10
80
3
60
-12
D
100
5
80
t d (on)
– A
DS
-14
7 -1.0
100
120
– V
V DD =-10V
V GS =-4V
-16
120
f =1MHz
140
-18
140
2
160
160
-20
3
2SJ501
-0.001
-0.01
-0.01
-1.0
-0.1
-10
-1.0
-0.1
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
-0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
5
3
2
7
5
3
2
7
5
3
2
0
0
I DP =- 2A
V DS =-10V
I D =-0.5A
2
Ta=25 C
Single pulse
-0.2
3
1.0
5 7 -0.1
Diode Forward Voltage, V SD – V
Drain-to-Source Voltage, V
is limited by R DS (on).
Operation in this area
Total Gate Charge, Qg – nC
-0.4
V GS - Q g
I F - V SD
2
2.0
-0.6
A S O
3
5 7 -1.0
I D = - 0 . 5A
-0.8
3.0
2
DS
-1.0
3
– V
5 7 -10
4.0
100 s
-1.2
V GS = 0
2
No.5948–3/4
-1.4
5.0
3

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