R1271NS12x Westcode Semiconductors, R1271NS12x Datasheet - Page 2

• Manufacturer Part Number: R1271NS12x
• Description: (R1271NS10x / R1271NS12x) Distributed Gate Thyristor
• Manufacturer: Westcode Semiconductors

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V
V
r
dv/dt
I
I
V
I
I
t
t
Q
Q
I
t
t
R th(j-hs) Thermal resistance, junction to heatsink
F
W
S
DRM
RRM
GT
H
gd
gt
rm
rr
q
TM
0
GT
rr
ra
t
WESTCODE
Characteristics
Notes:-
1)
2)
Introduction
The R1271 series of Distributed Gate thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses and are therefore suitable for
medium current, medium frequency applications.
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
Unless otherwise indicated T
The required t
details of t
PARAMETER
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Holding current
Gate controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% chord
Turn-off time (note 2)
Mounting force
Weight
Positive development in power electronics
q
codes.
q
(specified with dV
j
=125
dr
°
C.
/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for
MIN.
200
20
19
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Page 2 of 12
TYP. MAX. TEST CONDITIONS
200
120
510
0.5
1.0
2.0
85
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.547
0.237
0.024 Double side cooled
0.048 Single side cooled
1000 T
2.02
150
150
300
150
3.0
1.0
2.0
22
25
26
-
-
-
-
-
I
V
Rated V
Rated V
T
T
V
I
I
V
I
V
I
V
TM
FG
TM
TM
TM
j
j
j
D
D
r
r
r
=25°C
=25°C
=25°C
=50V
=50V, V
=50V, V
=80% V
=67%V
=2000A
=2A, t
=1000A, t
=1000A, t
=1000A, t
DRM
RRM
r
DRM
dr
dr
0.5µs, T
DRM
=80%V
=80%V
p
p
p
, I
=1000µs, di/dt=60A/µs,
=1000µs, di/dt=60A/µs,
=1000µs, di/dt=60A/µs,
, Linear ramp
TM
=2000A, di/dt=60A/µs,
V
R1271NS10x to R1271NS12x
case
DRM
DRM
D
=10V, I
=25°C
, dV
, dV
(Note 1)
dr
dr
/dt=20V/µs
/dt=200V/µs
T
=2A
June, 2001
UNITS
V/ s
K/W
m
mA
mA
mA
µC
µC
kN
µs
µs
µs
V
V
V
A
g