FLL200IB-3 Eudyna Devices, FLL200IB-3 Datasheet - Page 6

• Manufacturer Part Number: FLL200IB-3
• Description: (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
• Manufacturer: Eudyna Devices

For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
2-R 1.6±0.15
(0.063)
Metal-Ceramic Hermetic Package
17.0±0.15
21.0±0.15
(0.422)
(0.669)
(0.827)
(0.421)
12.0
10.7
1
3
(0.024)
Case Style "IB"
0.6
2
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
• Observe government laws and company regulations when discarding this
6
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
www.DataSheet.co.kr
Unit: mm(inches)
1. Gate
2. Source (Flange)
3. Drain
(0.004)
0.1
CAUTION
2.6±0.15
5.2 Max.
(0.102)
(0.205)
Datasheet pdf - http://www.DataSheet4U.net/