DB21413 Panasonic Semiconductor, DB21413 Datasheet
DB21413
Manufacturer Part Number
DB21413
Description
Silicon epitaxial planar type
Manufacturer
Panasonic Semiconductor
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DB2141300L
Manufacturer:
PANASONIC
Quantity:
2 844
DB21413
Silicon epitaxial planar type
For rectification
Features
Packaging
Absolute Maximum Ratings T
Note) * 1: Mounted on an alumina PC board (Board: 50 mm × 50 mm)
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: November 2010
Forward current (Average) I
Low forward voltage V
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Reverse voltage
Forward current (Average)
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
* 2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
3. * : t
of current from the operating equipment.
rr
measurement circuit
Parameter
Parameter
*
Pulse Generator
(PG-10N)
R
F
s
= 50 Ω
and small reverse current I
* 1
F(AV)
Bias Application Unit (N-50BU)
= 2 A rectification is possible
a
This product complies with the RoHS Directive (EU 2002/95/EC).
A
= 25°C±3°C
* 2
a
= 25°C
Wave Form Analyzer
(SAS-8130)
R
Symbol
Symbol
i
= 50 Ω
I
I
F(AV)
V
T
V
FSM
C
T
I
t
stg
R
rr
F1
R
j
t
R
I
V
V
I
R
–55 to +125
F
F
L
R
R
= 2.0 A
= I
Rating
= 100 Ω
= 40 V
= 10 V, f = 1 MHz
125
R
40
30
2
= 100 mA, I
Ver.CED
Conditions
V
R
Unit
°C
°C
V
A
A
rr
t
r
= 0.1
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
t
p
× I
R
,
t
Package
Marking Symbol: 4N
Code
Pin Name
SMini2-F4-B
I
1: Cathode
2: Anode
F
I
I
R
Output Pulse
F
R
L
= 100 mA
= 100 mA
= 100 Ω
Min
t
I
rr
rr
= 0.1 × I
t
0.46
Typ
25
43
12
R
Max
0.53
150
Unit
µA
pF
ns
V
1
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