AT-30511 Agilent(Hewlett-Packard), AT-30511 Datasheet - Page 3

• Manufacturer Part Number: AT-30511
• Description: Low Current/ High Performance NPN Silicon Bipolar Transistor
• Manufacturer: Agilent(Hewlett-Packard)

AT-30511, AT-30533 Characterization Information, T
Typical Performance
Figure 2. AT-30511 and AT-30533
Minimum Noise Figure and Amplifier
NF
V
Figure 5. AT-30511 and AT-30533
Power at 1 dB Gain Compression vs.
Frequency and Current at V
Note:
1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
CE
Symbol
including circuit losses.
[1]
|S
2.5
2.0
1.5
1.0
0.5
10
G
P
= 2 .7 V.
C
8
6
4
2
0
IP
21
0
1dB
1dB
0
CB
vs. Frequency and Current at
0
|
3
E
NF MIN.
2
0.5
0.5
5 mA
2 mA
Power at 1 dB Gain Compression (opt tuning)
V
Gain at 1 dB Gain Compression (opt tuning)
V
Output Third Order Intercept Point,
V
Gain in 50
Collector-Base Capacitance
FREQUENCY (GHz)
FREQUENCY (GHz)
CE
CE
CE
1.0
= 2.7 V, I
= 2.7 V, I
1.0
= 2.7 V, I
AMPLIFIER NF
1.5
1.5
C
C
CE
C
System; V
= 5 mA
= 5 mA
Parameters and Test Conditions
= 5 mA (opt tuning)
2.0
2.0
1 mA
5 mA
= 2.7 V.
2.5
2.5
CE
= 2.7 V, I
Figure 3. AT-30511 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
Figure 6. AT-30511 1 dB Compressed
Gain vs. Frequency and Current at
V
CE
25
20
15
10
25
20
15
10
= 2.7 V.
5
0
5
0
0
0
C
= 1 mA
0.5
0.5
FREQUENCY (GHz)
FREQUENCY (GHz)
CE
1.0
1.0
5 mA
4-25
5 mA
= 2 .7 V.
V
1 mA
CB
2 mA
1.5
1.5
= 3V, f = 1 MHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
2.0
2.0
2.5
2.5
A
= 25 C
Figure 4. AT-30533 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at V
Figure 7. AT-30533 1 dB Compressed
Gain vs. Frequency and Current at
V
Units
CE
dBm
dBm
dB
dB
pF
25
20
15
10
25
20
15
10
= 2.7 V.
5
0
5
0
0
0
0.5
0.5
AT-30511 AT-30533
FREQUENCY (GHz)
FREQUENCY (GHz)
Typ
16.5
0.04
5 mA
10
17
7
CE
5 mA
1.0
1.0
= 2 .7 V.
1 mA
2 mA
1.5
1.5
2.0
Typ
0.04
15
17
2
7
9
2.5
2.5