AT-41486 Agilent(Hewlett-Packard), AT-41486 Datasheet

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AT-41486

Manufacturer Part Number
AT-41486
Description
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Manufacturer
Agilent(Hewlett-Packard)
Datasheet

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Up to 6 GHz Low Noise
Silicon Bipolar Transistor
Technical Data
Features
• Low Noise Figure:
• High Associated Gain:
• High Gain-Bandwidth
• Surface Mount Plastic
• Tape-and-Reel Packaging
Note:
1. Refer to “Tape-and-Reel Packaging for
Description
Hewlett-Packard’s AT-41486 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
Semiconductor Devices”.
1.4 dB Typical at 1.0 GHz
1.7 dB Typical at 2.0 GHz
18.0 dB Typical at 1.0 GHz
13.0 dB Typical at 2.0 GHz
Product: 8.0 GHz Typical f
Package
Option Available
[1]
T
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50
device easy to use as a low noise
amplifier.
The AT-41486 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
T
Self-Aligned-Transistor
at 900 MHz, makes this
4-129
AT-41486
86 Plastic Package
BASE
Pin Connections
1
4
EMITTER
EMITTER
2
5965-8928E
3
COLLECTOR

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AT-41486 Summary of contents

Page 1

... Description Hewlett-Packard’s AT-41486 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41486 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter ...

Page 2

... AT-41486 Absolute Maximum Ratings Symbol Parameter V Emitter-Base Voltage EBO V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C [2,3] P Power Dissipation T T Junction Temperature j T Storage Temperature STG Part Number Ordering Information Part Number Increment AT-41486-TR1 1000 AT-41486-BLK 100 Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”. ...

Page 3

... AT-41486 Typical Performance 0.5 1.0 2.0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 1. Noise Figure and Associated Gain vs. Frequency 10mA 1dB 16 G 1dB (mA) C Figure 4. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency ...

Page 4

... AT-41486 Typical Scattering Parameters Freq GHz Mag. Ang. 0.1 .74 -38 28.1 0.5 .59 -127 22.0 1.0 .56 -168 16.8 1.5 .57 169 13.5 2.0 .62 152 11.1 2.5 .63 142 3.0 .64 130 3.5 .68 122 4.0 .71 113 4.5 .74 105 5.0 .77 99 5.5 .79 93 6.0 .81 87 AT-41486 Typical Scattering Parameters, Common Emitter Freq GHz Mag ...

Page 5

Plastic Package Dimensions 0.51 0.13 (0.020 0.005 2.34 (0.092 2 2.67 0.38 (0.105 0.15) 1.52 0.25 (0.060 0.010) 5 TYP. 8 MAX 0 MIN 0.66 0.013 (0.026 0.005) 2.16 0.13 (0.085 0.005) 0.30 MIN (0.012 MIN) ...

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